| PART |
Description |
Maker |
| CY27H512-30JC CY27H512-30WC CY27H512-35HC CY27H512 |
64K x 8 High-Speed CMOS EPROM
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 25 ns, PDSO28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, PDSO28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 30 ns, PDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 55 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 70 ns, CQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDSO28
CAP SM CER 2200PFD 50V 10% X7R 0805
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| AM27C512 AM27C4096-55DC AM27C4096-55DCB AM27C4096- |
512 Kilobit (64 K x 8-Bit) CMOS EPROM 512千比特（64亩8位）的CMOS存储
512 Kilobit (64 K x 8-Bit) CMOS EPROM 64K X 8 UVPROM, 90 ns, CDIP28
Quad bistable latches 16-SOIC 0 to 70 512千比特（64亩8位）的CMOS存储
512 Kilobit (64 K x 8-Bit) CMOS EPROM 64K X 8 UVPROM, 120 ns, CDIP28
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-SOIC 0 to 70 64K X 8 UVPROM, 55 ns, CDIP28
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-SOIC 0 to 70 64K X 8 UVPROM, 250 ns, CDIP28
Octal D-type Transparent Latches with 3-state Outputs 20-SO 0 to 70 64K X 8 UVPROM, 200 ns, CDIP28
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-PDIP 0 to 70 512千比特（64亩8位）的CMOS存储
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-SSOP 0 to 70 64K X 8 UVPROM, 250 ns, CDIP28
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-SO 0 to 70 64K X 8 UVPROM, 70 ns, CDIP28
Octal D-type Transparent Latches with 3-state Outputs 20-PDIP 0 to 70
Quad bistable latches 16-PDIP 0 to 70
Octal D-type Transparent Latches with 3-state Outputs 20-SOIC 0 to 70
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| TMM27512ADI-20 |
64K X 8 UVPROM, 200 ns, CDIP28
|
|
| 27C1024MQB/C10 |
64K X 16 UVPROM, 100 ns, CDIP40
|
|
| MD2732A-25 LD2732A-2 TD2732A-2 TD2732A-20 |
4K X 8 UVPROM, 250 ns, CDIP24
|
INTEL CORP
|
| M27256 M27256-F1 M27256-F6 M27256-4F6 M27256-1F1 M |
NND - NMOS 256 KBIT (32KB X8) UV EPROM
NMOS 256K 32K x 8 UV EPROM
32K X 8 UVPROM, 200 ns, CDIP28
32K X 8 UVPROM, 250 ns, CDIP28
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| AM27C191-35LCB AM27C191-35/BKA |
2K X 8 UVPROM, 35 ns, CQCC28
2K X 8 UVPROM, 35 ns, CDFP24
|
ADVANCED MICRO DEVICES INC
|
| M27C4002-15J1 M27C4002-80XJ6TR M27C4002-80XJ1X M27 |
256K X 16 UVPROM, 150 ns, CQCC44
256K X 16 UVPROM, 80 ns, CQCC44
256K X 16 UVPROM, 70 ns, CDIP40
256K X 16 OTPROM, 120 ns, PDIP40
256K X 16 OTPROM, 120 ns, PQCC44
256K X 16 OTPROM, 200 ns, PQCC44
256K X 16 UVPROM, 60 ns, CQCC44
|
STMICROELECTRONICS
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
|
